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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1507 DESCRIPTION *Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -4A *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SD2280 APPLICATIONS *Designed for relay drivers,high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w ww scs .i -60 V -50 V -6 V -7 A -20 A 3 W UNIT .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 40 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SB1507 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= -50 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1m A; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1m A; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A B -0.4 V A ICBO Collector Cutoff Current VCB= -40V; IE= 0 -100 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product Switching Times ton Turn-on Time w w scs .i w IC= -1A; VCE= -2V IC= -5A; VCE= -2V IC= -1A; VCE= -5V .cn mi e 70 30 -100 A 280 10 MHz 0.2 IC= -2A; RL= 10, IB1= -IB2= -0.2A, VCC= -20V s tstg Storage Time 0.7 s tf Fall Time 0.1 s hFE-1 Classifications Q 70-140 R 100-200 S 140-280 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SB1507
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